voltage drift
英 [ˈvəʊltɪdʒ drɪft]
美 [ˈvoʊltɪdʒ drɪft]
网络 电压漂移
双语例句
- A model of high voltage SOI-LDMOS with trench oxide in drift region
漂移区槽氧高压SOI-LDMOS器件模型 - In the field of measurement, the sensors and circuits may inevitably cause residual voltage and zero drift called zero error.
在测量领域中，传感器与测量电路一般都不可避免地存在残余电压与零点漂移，即零点误差。 - Development of High Voltage Thin Film SOI Device with Linearly Doped Drift Region
漂移区为线性掺杂的高压薄膜SOI器件的研制 - A High Impedance Operational Module with Low Input Offset Voltage Drift
高阻抗低漂移运算功能块 - The length of laser resonate cavity was changed by high voltage amplifier to compensate frequency drift so that to obtain closed-loop system.
通过高压放大器调整激光谐振腔长度，使得频率漂移得到补偿，系统实现闭环控制； - Therefore, the examination of the zener diode voltage drift parameter has the vital significance.
因此，稳压二极管电压漂移参数的检测具有重要的意义。 - The result of compensation attains 69%~ 99%. The unstable output under the grid voltage of JFET Which produced by temperature drift was finish well.
补偿效果从69%到99%，很好的解决了温度漂移所带来的场效应管栅极电压下的不稳定输出。 - Results show that, after radiation, the threshold voltage drift of NMOS transistors is larger than that of PMOS devices, which is different from the experimental results in the Co~ ( 60) radiation environment.
实验结果表明，辐照后，与用Co60作为辐射源辐照所做实验结果明显不同的是，NMOS器件的阈值电压漂移幅度远大于PMOS器件的漂移幅度。 - The improved voltage model of rotor flux is proposed in the paper. It eliminates the influence to actual system function in the voltage model of rotor flux for the proper drift problem and cumulative error of pure integral calculus tache.
提出了改进的电压型转子磁链估算模型，消除了电压型转子磁链估算模型中纯积分环节所固有的漂移问题和积累误差对实际系统性能的影响。 - The high voltage power supply system of BESM drift chamber is reported How to choose the exact high voltage of the sense wire, the HV power supply, the HV distribution, the HV board design and the program of HV control are described respectively.
介绍了BESⅢ漂移室的高压供电系统，分别阐述了漂移室信号丝高压的确定方法，高压供给电源，高压分配方案，高压板的设计，高压控制程序等。 - This article narrated several kind of plans of examining high accuracy zener diode parameter, emphatically researched the test method of taking high accuracy constant-source as datum current to examine the voltage drift of zener diode.
本文叙述了检测高精度稳压二极管参数的几种方案，重点介绍了以高精度恒流源为基准电流检测稳压二极管电压漂移的测试方法； - The equivalent input noise voltage, offset voltage drift, common mode rejection, power source rejection and other characteristics of a common source-common grid cascade amplifier is analysed in detail.
本文对一种共源-共栅串接差分输入级运算放大器的等效输入噪声电压、失调电压温漂、共模抑制比和电源电压抑制比等参数进行了详细的分析。 - Based on the solution of 2-D Poisson equation, an analytical model for optimization of SOI high voltage devices with step doping profile in drift region is proposed.
基于分区求解二维泊松方程，提出了阶梯掺杂漂移区SOI高压器件的浓度分布优化模型。 - We introduce how to choose activating voltage for pressure sensor, analyze output voltage characteristic of an integrated regulate circuit vs input voltage and the principles to eliminate thermal drift of the offset and in the same time make it zero, furthermore did experiments to verify the principles.
本文介绍应怎样选择其激励电压值，同时分析了集成稳压电路的电压输入输出特性以及利用它对传感器供电消除热零点漂移同时又使零点偏移为零，并用实验加以验证。 - The influence of total dose, irradiation dose rate and gate biased voltage on the stability of radiation dose recording threshold voltage of PMOS dosimeters have been studied at room temperature. The threshold voltage drift trends and amplitude have been observed at different biased condition on gate source.
在室温条件下，研究了辐照偏置、总剂量和剂量率对PMOS剂量计辐照剂量记录-阈电压的稳定性影响，观察了辐照后阈电压在不同栅偏条件下的变化趋势和幅度。 - A Novel Analytic Model on Surface Voltage and Electric Field of the Drift of Offset-Gate MOS
一种新型偏置栅MOS管漂移区表面电压和电场的分析模型 - This paper analyses the factors that effect the input offset voltage V_ ( os) and temperature drift the IC operational amplifier.
本文分析了影响集成运算放大器的输入失调电压V（os）及温度漂移的因素、以及与温度的关系。提出了一种简单有效的减小失调电压V（os）及漂移（（？） - The dependence of breakdown voltage on the length and doping concentration of the drift region is also calculated.
计算了漂移区长度，掺杂浓度和击穿电压的关系。 - Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
给出了漂移区为线性掺杂的高压薄膜SOI器件的设计原理和方法。 - The influence of traditional analog integrator on measuring precision is analyzed from three aspects of integrated operational amplifier: the maladjusted input voltage, bias current and its drift, the gain and band width and the temperature change. The error formula is summarized.
从集成运放输入失调电压、偏置电流及其漂移、集成运放增益和带宽、温度变化对积分电路的影响3个方面分析了传统的模拟积分器对测量精度的影响，并总结出了误差公式。 - Experimental results show that a temperature drift equal to or less than 0.2% ℃ and an offset voltage drift of 100~ 200 mV for an actual derice, which meet the requirements for applications, have been achieved through the compensation designing.
实验结果表明，通过补偿设计，实际电路的温度漂移为≤0.2%℃，失调电压漂移为100～200mV，符合使用要求。 - This circuit can generate a voltage reference with as great a temperature drift as 18.8PPM/ ℃ and a PTAT current independent of power supply.
该电路结构产生的带隙基准电压温漂达到18.8PPM/℃，PTAT电流几乎与电源电压无关。 - An Analytical Model for Optimizing SOI High Voltage Device with Step Doping Profile in Drift Region
阶梯掺杂漂移区SOI高压器件浓度分布优化模型 - A Triple-GEM was studied including the relation between the voltage parameters and effective gain, the influence of drift and transfer field 'parameters on the energy resolution and the relation between output of different kinds of pre-amplifiers and pad sizes.
研制了三级GEM气体探测器，对各个电压参数和增益的关系，漂移区和传输区对能量分辨率的影响，以及前置放大器输出与pad尺寸的关系作了研究。 - Based on the analysis of benchmark voltage circuit design, the zero drift in dynamic condition is solved by increasing capacitance of the parallel capacitor or the power supply.
分析基准电压回路的电路设计，通过增大并联电容或供电电源的容量，解决了动态工作下的零漂问题。 - For the stator voltage, DC current detection process drift, low-pass filter is designed based on series compensated flux estimator. It can solve the DC drift due to flux estimation error caused the problem.
设计了基于低通滤波器串联补偿的磁链估计器，较好地解决了因直流漂移而引起的磁链估计偏差问题。 - Schottky barrier diode as a majority carrier device with high switching speed has been widely used in power circuit. But, in order to achieve high breakdown voltage, the concentrate of the drift region need to be lower enough, and the specific on-resistance improved a lot.
肖特基势垒二极管作为一种多子器件具有很高的开关速度，但是要做到耐压很高就需要降低漂移区载流子的浓度，从而使正向导通电阻很大。 - Taking into account that the voltage reference model in the traditional MRAS has integral drift, the paper used the improved MRAS. The improved MRAS used the motor as the reference model to estimate the motor speed.
考虑到传统的MRAS电压参考模型存在积分漂移问题，本文对传统MRAS法进行了改进，以电机本体作为参考模型来计算电机的转子磁链实现电机的转速估计，并通过仿真和实验来验证其可行性。